Compact Modeling of SiC Insulated Gate Bipolar Transistors

Compact Modeling of SiC Insulated Gate Bipolar Transistors
Author :
Publisher :
Total Pages : 216
Release :
ISBN-10 : OCLC:1046076539
ISBN-13 :
Rating : 4/5 (39 Downloads)

Book Synopsis Compact Modeling of SiC Insulated Gate Bipolar Transistors by : Sonia Marie Perez

Download or read book Compact Modeling of SiC Insulated Gate Bipolar Transistors written by Sonia Marie Perez and published by . This book was released on 2016 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog-A formats. Initially, the existing MAST model mobility equations were updated using recently referenced silicon carbide (SiC) data. The updated MAST model was then verified for each device tested. Specifically, the updated MAST model was verified for the following IGBT devices and operation temperatures: n-channel silicon at 25 ̊C and at 125 ̊C; n-channel SiC at 25 ̊C and at 175 ̊C; and p-channel SiC at 150 ̊C and at 250 ̊C. Verification was performed through capacitance, DC output characteristics, and turn-off transient simulations. The validated MAST model was then translated into the Verilog-A language, and the Verilog-A model results were validated against the updated MAST model.


Compact Modeling of SiC Insulated Gate Bipolar Transistors Related Books

Compact Modeling of SiC Insulated Gate Bipolar Transistors
Language: en
Pages: 216
Authors: Sonia Marie Perez
Categories: Bipolar transistors
Type: BOOK - Published: 2016 - Publisher:

DOWNLOAD EBOOK

This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipolar Transistor (IGBT) compact model in both MAST and Verilog
Modeling of SiC P-channel Insulated Gate Bipolar Transistors (IGBTs)
Language: en
Pages: 128
Authors: Mahmood Shihadeh Saadeh
Categories: Insulated gate bipolar transistors
Type: BOOK - Published: 2011 - Publisher:

DOWNLOAD EBOOK

POWER/HVMOS Devices Compact Modeling
Language: en
Pages: 210
Authors: Wladyslaw Grabinski
Categories: Technology & Engineering
Type: BOOK - Published: 2010-07-20 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electri
Compact Hierarchical Bipolar Transistor Modeling with Hicum
Language: en
Pages: 753
Authors: Michael Schr”ter
Categories: Technology & Engineering
Type: BOOK - Published: 2010 - Publisher: World Scientific

DOWNLOAD EBOOK

Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circu
Simulation Study of Silicon Carbide Clustered Insulated Gate Bipolar Transistor (CIGBT).
Language: en
Pages:
Authors: Kalyani Menon
Categories:
Type: BOOK - Published: 2015 - Publisher:

DOWNLOAD EBOOK