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Simulation Monte Carlo dibimensionnelle de transistors à effet de champ à grille isolée sur hétérostructures III-V
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Authors: Karim Bellahsni
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Type: BOOK - Published: 1991 - Publisher:

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Dans ce travail, un modèle Monte Carlo bidimensionnel, tenant compte du courant grille a été développé afin d'étudier le fonctionnement et de prédire les
Monte Carlo Device Simulation
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Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms a
The Monte Carlo Method for Semiconductor Device Simulation
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This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors,
Monte-Carlo Simulation of Electron Transport in III-Vsemiconductor Heterostructures
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