Analytical And Numerical Study Of Gaas Algaas Based Multiple Quantum Wells High Electron Mobility Transistors Hemts

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Analytical and Numerical Study of GaAs/AlGaAs Based Multiple Quantum Wells High Electron Mobility Transistors (HEMTs)

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Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996

Authors: M.S. Shur

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Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound se