Download or read book Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts) written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-05-29 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).Freeman, Jon C.Glenn Research CenterGALLIUM NITRIDES; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; ENERGY GAPS (SOLID STATE); MICROWAVE EQUIPMENT; POLARIZATION (CHARGE SEPARATION); PIEZOELECTRICITY