Download or read book Growth and Characterization of Novel Gan High Electron Mobility Transistor Structures with Enhanced Two-dimensional Electron Gas written by Jeffrey R. Simpson and published by . This book was released on 2016 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Novel gallium nitride based high electron mobility transistor structures were grown using metalorganic chemical vapor deposition. Traditional GaN based HEMT structures incorporate a version of an aluminum gallium nitride / gallium nitride single crystalline heterointerface for generation of a conductive two-dimensional electron gas. The grown structures aim to enhance the properties of their two-dimensional electron gases beyond commercially available designs. Novel material alterations to the traditional HEMT structures have established a new materials platform for this technology. Growth and characterization of these novel materials are presented.