Real Time Characterization Of Hot Wire Cvd Growth Of Si
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Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydr
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We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filament
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Real-time spectroscopic ellipsometry (RTSE) has proven to be an exceptionally valuable tool in the optimization of hot wire CVD (HWCVD) growth of both silicon h