Fabrication And Current Collapse Characterizations Of Enhancement Mode Algan Gan High Electron Mobility Transistors

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Fabrication and Current Collapse Characterizations of Enhancement Mode Algan/Gan High Electron Mobility Transistors

Author	: 何昕逸
Publisher	:
Total Pages	:
Release	: 2016
ISBN-10	: OCLC:961139629
ISBN-13	:
Rating	: 4/5 (29 Downloads)

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Book Synopsis Fabrication and Current Collapse Characterizations of Enhancement Mode Algan/Gan High Electron Mobility Transistors by : 何昕逸

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This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in mic

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