Fabrication and Investigation of Current Behavior of Enhancement-mode P-GaN/AIGaN/GaN High Electron Mobility Transistor with Submicron Gate Length
| Author | : 楊智淵 |
| Publisher | : |
| Total Pages | : |
| Release | : 2022 |
| ISBN-10 | : OCLC:1333980682 |
| ISBN-13 | : |
| Rating | : 4/5 (82 Downloads) |
Book Synopsis Fabrication and Investigation of Current Behavior of Enhancement-mode P-GaN/AIGaN/GaN High Electron Mobility Transistor with Submicron Gate Length by : 楊智淵
Download or read book Fabrication and Investigation of Current Behavior of Enhancement-mode P-GaN/AIGaN/GaN High Electron Mobility Transistor with Submicron Gate Length written by 楊智淵 and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: