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Formation Of Low Resistivity Germanosilicide Contacts To Phosphorus Doped Silicon Germanium Alloy Source Drain Junctions For Nanoscale Cmos

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Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS

Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
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Total Pages : 131
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ISBN-10 : OCLC:53966428
ISBN-13 :
Rating : 4/5 (28 Downloads)
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Book Synopsis Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS by : Hongxiang Mo

Download or read book Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS written by Hongxiang Mo and published by . This book was released on 2003 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: SiGe, germanosilicide, contact reistance, silicide, silicon germanium, MOSFET, source drain.


Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS Related Books

Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS
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Formation of Low-resistivity Germanosilicide Contacts to Phosphorus Doped Silicon-germanium Alloy Source/drain Junctions for Nanoscale CMOS

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State-of-the-art p-channel metal oxide semiconductor field effect transistors (MOSFETs) employ Si(1-x)Ge(x) source/drain junctions to induce uniaxial compressiv
Dissertation Abstracts International
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