Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications

Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications
Author :
Publisher :
Total Pages :
Release :
ISBN-10 : 3844068856
ISBN-13 : 9783844068856
Rating : 4/5 (56 Downloads)

Book Synopsis Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications by : Muhammad Alshahed

Download or read book Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications written by Muhammad Alshahed and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:


Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications Related Books

Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications
Language: en
Pages:
Authors: Muhammad Alshahed
Categories:
Type: BOOK - Published: 2019 - Publisher:

DOWNLOAD EBOOK

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Language: en
Pages: 242
Authors: Gaudenzio Meneghesso
Categories: Technology & Engineering
Type: BOOK - Published: 2018-05-12 - Publisher: Springer

DOWNLOAD EBOOK

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The ne
GaN Transistors for Efficient Power Conversion
Language: en
Pages: 266
Authors: Alex Lidow
Categories: Science
Type: BOOK - Published: 2014-09-15 - Publisher: John Wiley & Sons

DOWNLOAD EBOOK

Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its
Gallium Nitride (GaN)
Language: en
Pages: 372
Authors: Farid Medjdoub
Categories: Technology & Engineering
Type: BOOK - Published: 2017-12-19 - Publisher: CRC Press

DOWNLOAD EBOOK

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on
Study of Gallium Nitride High Electron Mobility Transistors Towards Highly Efficient and Reliable Power Switchin
Language: en
Pages: