Download or read book Growth and Characterization of Micro-crystalline Silicon-germanium and Silicon-carbon Films written by Karl Robert Erickson and published by . This book was released on 1998 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis reports on the growth chemistry and appropriate process parameters that result in the formation of micro-crystalline silicon-germanium and silicon-carbon films. The growth technique uses an electron-cyclotron-resonance-chemical-vapor-deposition apparatus. This apparatus allows the process engineer to control such parameters as the plasma resonance plane, substrate temperature, microwave power, vacuum pressure, gas flow ratios, and gas combinations. The plasma gas is hydrogen and the precursor gases are silane and germane. The hydrogen ions and electrons in the plasma dissociate the precursor gases into radicals that give rise to film growth on the substrate. The substrate temperatures are kept below 300 C so that deposition on polyimide substrates can be performed.