Progress Towards Two-qubit Devices in Si/sige Heterostructures

Progress Towards Two-qubit Devices in Si/sige Heterostructures
Author :
Publisher :
Total Pages : 98
Release :
ISBN-10 : OCLC:1044735208
ISBN-13 :
Rating : 4/5 (08 Downloads)

Book Synopsis Progress Towards Two-qubit Devices in Si/sige Heterostructures by : Ryan Howard Foote

Download or read book Progress Towards Two-qubit Devices in Si/sige Heterostructures written by Ryan Howard Foote and published by . This book was released on 2018 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since being proposed almost 40 years ago, scientists across many disciplines have made great progress in the fields of quantum computation and quantum information. Instead of a classical bit (0 or 1), a quantum computer uses a two-level quantum system as a quantum bit or qubit. By controllably manipulating the quantum-mechanical properties of these qubits, a quantum computer could, for example, be used to simulate other, less well understood quantum systems, or to run certain classes of quantum algorithms that cannot be run on classical hardware. In order to build a quantum computer, certain basic requirements must be met. As with a classical computer, logic gates are necessary to controllably manipulate qubits to perform calculations. One such requirement for a universal quantum computer is a two-qubit logic gate. This is an inherently quantum mechanical gate, which has no classical analog. For example, the controlled-not two-qubit gate will perform a not operation on the target qubit if and only if the control qubit is in the one state, else it does nothing to the target qubit. In either case, the control qubit is left unchanged and unmeasured. Being able to perform this gate with high fidelity is critical to creating a quantum computer. In this dissertation, I present progress towards fabricating, characterizing, and manipulating two-qubit devices in Si/SiGe heterostructures. First, I motivate the use of quantum dot qubits hosted in Si/SiGe as a suitable platform for quantum computing. Then, I present characterization of Si/SiGe substrates and discuss fabrication of a quantum dot device. Next, I outline the electronics set up for measuring a quantum dot device in a dilution refrigerator. I then present results of two, published experiments which explore multi-qubit systems: one which demonstrates controllable tunnel coupling between a quantum dot an a nearby localized impurity, and the other which demonstrates state-conditional Landau-Zener-Stückelberg oscillations between capacitively coupled double quantum dots in a quadruple quantum dot device. Next I discuss fabrication and characterization of micromagnets for spin qubit applications. I finally conclude by discussing future research avenues towards realizing a robust, multi-qubit device in silicon.


Progress Towards Two-qubit Devices in Si/sige Heterostructures Related Books

Progress Towards Two-qubit Devices in Si/sige Heterostructures
Language: en
Pages: 98
Authors: Ryan Howard Foote
Categories:
Type: BOOK - Published: 2018 - Publisher:

DOWNLOAD EBOOK

Since being proposed almost 40 years ago, scientists across many disciplines have made great progress in the fields of quantum computation and quantum informati
Heterostructure Modifications, Fabrication Improvements, and Measurement Automation of Si/SiGe Quantum Dots for Quantum Computation
Language: en
Pages: 0
Authors: Thomas Walter McJunkin
Categories:
Type: BOOK - Published: 2021 - Publisher:

DOWNLOAD EBOOK

Quantum computing - leveraging quantum phenomena to perform complex and otherwise intractable computational problems - has rapidly progressed from a theoretical
Quantum Devices in SI/SiGe Heterostructures
Language: en
Pages: 142
Authors: Keith A. Slinker
Categories:
Type: BOOK - Published: 2006 - Publisher:

DOWNLOAD EBOOK

Investigation of Lateral Gated Quantum Devices in Si/SiGe Heterostructures
Language: en
Pages: 75
Authors: Andrew Pan Lai
Categories:
Type: BOOK - Published: 2013 - Publisher:

DOWNLOAD EBOOK

Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Becaus
Emerging Devices for Low-Power and High-Performance Nanosystems
Language: en
Pages: 267
Authors: Simon Deleonibus
Categories: Science
Type: BOOK - Published: 2018-12-13 - Publisher: CRC Press

DOWNLOAD EBOOK

The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices