Well-aligned 3-dimensional Self-assembly in Block Copolymers and Their Nanotechnological Applications

Well-aligned 3-dimensional Self-assembly in Block Copolymers and Their Nanotechnological Applications
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Publisher :
Total Pages : 213
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ISBN-10 : OCLC:212381650
ISBN-13 :
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Book Synopsis Well-aligned 3-dimensional Self-assembly in Block Copolymers and Their Nanotechnological Applications by : Dae Up Ahn

Download or read book Well-aligned 3-dimensional Self-assembly in Block Copolymers and Their Nanotechnological Applications written by Dae Up Ahn and published by . This book was released on 2007 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: "We have prepared well-aligned 3-dimensional block copolymer nano-cylinders over the entire sample area and thickness without any additional external field applications such as mechanical and electric fields. Self-assembled 3-dimensional perpendicular cylinder orientation was achieved by thermodynamic controls of incompatibility between the block components, and further elaborate modification of size and hexagonal alignment of perpendicular cylinders was also accomplished by kinetic controls of diffusive molecular mobility of block copolymer microdomains. Since those two controls have been mainly achieved by simple blending of minority homopolymer, the intrinsic advantages of block copolymer nanopatterning, such as fast and spontaneous 3-dimensional nanopatterning with a high thermodynamic stability and reproducibility, have been completely preserved in this fabrication strategy. After preparing block copolymer masks containing perpendicularly and hexagonally well-aligned nano-cylinders, a top-down method using excimer laser was applied to the block copolymer masks for a fast nanopattern transfer to organic and inorganic substrates in the form of nano-dots. Mask-image-like high-density polystyrene and silicon nano-dots were readily obtained after the one-step excimer laser irradiation on the block copolymer masks without any additional selective staining and/or etching steps before a non-selective etching process. The numerical analysis on the photothermal excimer laser ablation of periodically nanostructured block copolymer masks revealed that sufficiently low laser intensity was suitable for the one-step fabrication of mask image-like topographic nanopatterns on the surface of silicon substrates, as long as the intensity was high enough to induce a matrix-assisted photothermal excimer laser ablation in less UV-sensitive block component. Therefore, we illustrate a novel nanofabrication technique using a top-down after bottom-up method to create new opportunities for the fabrication of low-cost and high-throughput nanostructured materials with highly ordered 3-dimensional nanopatterns."--Abstract.


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